Electronic structure and structural defects in 3d-metal doped In₂O₃

Ho J. ¹ , Becker J. ¹ , Leedahl B. ¹ , Boukhvalov D.W.^{2, 3} , Zhidkov I.S.⁴ , Kukharenko A.I.⁴ , Kurmaev E.Z.^{4, 5} , Cholakh S.O.⁴ , Gavrilov N.V. ⁶ , Brinzari V.I.⁷ , Moewes A. ¹

Journal of Materials Science: Materials in Electronics

Springer New York LLC

15

Английский

14091-14098

Опубликовано

30

2019

• ¹ Department of Physics and Engineering Physics|University of Saskatchewan
• ² College of Science|Institute of Materials Physics and Chemistry|Nanjing Forestry University
• ³ Theoretical Physics and Applied Mathematics Department|Ural Federal University
• ⁴ Institute of Physics and Technology|Ural Federal University
• ⁵ M. N. Mikheev Institute of Metal Physics|Ural Branch of Russian Academy of Sciences
• ⁶ Institute of Electrophysics|Ural Branch of Russian Academy of Sciences
• ⁷ E. Pokatilov Laboratory of Physics and Engineering of Nanomaterials|Department of Theoretical Physics|Moldova State University