Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO<sub>2</sub>

Авторы

Green R.J. ¹ , St. Onge D.J. ¹ , Moewes A. ¹ , Zatsepin D.A.^2, ³ , Kurmaev E.Z.³ , Gavrilov N.V. ⁴ , Zatsepin A.F.⁵

Журнал

Journal of Applied Physics

Номер выпуска

Язык

Английский

Страницы

103708

Статус

Опубликовано

Том

115

Год

2014

Организации

¹ Department of Physics and Engineering Physics, University of Saskatchewan
² Department of Electrophysics, Institute of Physics and Technology, Ural Federal University
³ Institute of Metal Physics, Russian Academy of Sciences, Ural Division
⁴ Institute of Electrophysics, Russian Academy of Sciences, Ural Division
⁵ Institute of Physics and Technology, Ural Federal University

Дата создания

09.07.2024

Дата изменения

09.07.2024

Постоянная ссылка

https://repository.rudn.ru/ru/records/article/record/132009/

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Статья

McLeod J.A., Green R.J., Leedahl B., Moewes A., Boukhvalov D.W., Zatsepin D.A., Kurmaev E.Z., Zhidkov I.S., Finkelstein L.D., Cholakh S.O., Cui L., Gavrilov N.V.

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Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO2

Другие записи

MODULATION OF THE BAND GAP OF GRAPHENE OXIDE: THE ROLE OF AA-STACKING

LOCAL STRUCTURE OF FE IMPURITY ATOMS IN ZNO: BULK VERSUS SURFACE

Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO₂