Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

Seo J.H.¹ , Park D.S.¹ , Cho S.W.¹ , Kim C.Y.¹ , Jang W.C.¹ , Whang C.N.¹ , Yoo K.-H.¹ , Chang G.S. ² , Pedersen T. ² , Moewes A. ² , Chae K.H.³ , Cho S.J.⁴

Applied Physics Letters

American Institute of Physics

16

Английский

Опубликовано

89

2006

• ¹ Institute of Physics and Applied Physics|Yonsei University
• ² Department of Physics and Engineering Physics|University of Saskatchewan
• ³ Division of Materials Science and Technology|Korea Institute of Science and Technology
• ⁴ Department of Physics|Kyungsung University

08.07.2024

08.07.2024

https://repository.rudn.ru/ru/records/article/record/118816/