МОДЕЛИРОВАНИЕ МЕТОДОМ ТРАНСФЕР-МАТРИЦЫ НЕОДНОРОДНЫХ БАРЬЕРНЫХ ДИОДОВ ШОТТКИ НА ОСНОВЕ КАРБИДА КРЕМНИЯ

The silicon carbide semiconductor device technology has reached during the last few years a satisfactory level of maturity. The paper presents a novel modelling technique for the static characteristics of power Schottky barrier diodes on SiC. Starting from an accurate and physically sound estimation of the transmission coefficient for the electrons movement across the Schottky barrier, the forward and reverse bias static current is evaluated and compared to experimental results. In order to properly reproduce experimental results, an inhomogeneous parallel conduction description of the Schottky barrier is shown to be required in reverse bias.