INVERSE-TUNABLE RED LUMINESCENCE AND ELECTRONIC PROPERTIES OF NITRIDOBERYLLOALUMINATES SR<SUB>2−X</SUB>BA<SUB>X</SUB>[BEAL<SUB>3</SUB>N<SUB>5</SUB>]:EU<SUP>2+</SUP> (X=0–2) Статья Elzer E., Schnick W., Strobel P., Weiler V., Schmidt P.J., Amin M.R., Moewes A. Chemistry - A European Journal. Wiley-VCH Verlag. Том 28. 2022. e202104121 с.
BAND GAP AND ELECTRONIC STRUCTURE OF DEFECTS IN THE TERNARY NITRIDE BP<SUB>3</SUB>N<SUB>6</SUB>: EXPERIMENT AND THEORY Статья De Boer T., Fattah M.F.A., Amin M.R., Moewes A., Ambach S.J., Vogel S., Schnick W. Journal of Materials Chemistry C. Royal Society of Chemistry. Том 10. 2022. С. 6429-6434
ENERGY LEVELS OF EU<SUP>2+</SUP> STATES IN THE NEXT-GENERATION LED-PHOSPHOR SRLI<SUB>2</SUB>AL<SUB>2</SUB>O<SUB>2</SUB>N<SUB>2</SUB>:EU<SUP>2+</SUP> Статья Amin M.R., Moewes A., Strobel P., Schmidt P.J., Schnick W. Journal of Materials Chemistry C. Royal Society of Chemistry. 2022.
UNRAVELING THE ENERGY LEVELS OF EU<SUP>2+</SUP>IONS INMBE<SUB>20</SUB>N<SUB>14</SUB>:EU<SUP>2+</SUP>(M= SR, BA) PHOSPHORS Статья Amin M.R., Moewes A., Elzer E., Schnick W. Journal of Physical Chemistry C. Том 125. 2021. С. 11828-11837
COMPREHENSIVE BAND GAP AND ELECTRONIC STRUCTURE INVESTIGATIONS OF THE PROMINENT PHOSPHORS M<SUB>2</SUB>SI<SUB>5</SUB>N<SUB>8</SUB>:EU<SUP>2+</SUP>(M = CA, SR, BA) DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY Статья Tolhurst T.M., Moewes A., Braun C., Schnick W. Journal of Physical Chemistry C. Том 125. 2021. С. 25799-25806
DETECTING A HIERARCHY OF DEEP-LEVEL DEFECTS IN THE MODEL SEMICONDUCTOR ZNSIN<SUB>2</SUB> Статья De Boer T., Moewes A., Häusler J., Rudel S.S., Schnick W., Strobel P., Boyko T.D. Journal of Physical Chemistry C. Том 125. 2021. С. 27959-27965
ELECTRONIC PROPERTIES OF CARBYNE CHAINS: EXPERIMENT AND THEORY Статья De Boer T., Moewes A., Zatsepin D., Raikov D., Kurmaev E., Zatsepin A.F. Journal of Physical Chemistry C. Том 125. 2021. С. 8268-8273
TUNING THE ELECTRONIC BAND GAP OF OXYGEN-BEARING CUBIC ZIRCONIUM NITRIDE: C-ZR<SUB>3- X</SUB>(N<SUB>1- X</SUB>O<SUB>X</SUB>)<SUB>4</SUB> Статья Boyko T.D., Zerr A., Moewes A. ACS Applied Electronic Materials. ACS Publications. Том 3. 2021. С. 4768-4773
ORIGIN AND CONTROL OF ROOM TEMPERATURE FERROMAGNETISM IN CO,ZN-DOPED SNO<SUB>2</SUB>: OXYGEN VACANCIES AND THEIR LOCAL ENVIRONMENT Статья Ho J., De Boer T., Braun P.M., Leedahl B., Moewes A., Manikandan D., Murugan R. Journal of Materials Chemistry C. Royal Society of Chemistry. Том 8. 2020. С. 4902-4908
ELECTRONIC STRUCTURE INVESTIGATION OF WIDE BAND GAP SEMICONDUCTORS - MG<SUB>2</SUB>PN<SUB>3</SUB>AND ZN<SUB>2</SUB>PN<SUB>3</SUB>: EXPERIMENT AND THEORY Статья Al Fattah M.F., Kasap S., Amin M.R., Moewes A., Mallmann M., Schnick W. Journal of Physics Condensed Matter. Том 32. 2020. 405504 с.
DIRECT EVIDENCE OF CHARGE TRANSFER UPON ANION INTERCALATION IN GRAPHITE CATHODES THROUGH NEW ELECTRONIC STATES: AN EXPERIMENTAL AND THEORETICAL STUDY OF HEXAFLUOROPHOSPHATE Статья De Boer T., Moewes A., Lapping J.G., Cabana J., Read J.A., Fister T.T., Balasubramanian M. Chemistry of Materials. American Chemical Society. Том 32. 2020. С. 2036-2043
UNDERSTANDING OF LUMINESCENCE PROPERTIES USING DIRECT MEASUREMENTS ON EU<SUP>2+</SUP>-DOPED WIDE BANDGAP PHOSPHORS Статья Amin M.R., Qamar A., Moewes A., Strobel P., Giftthaler T., Schnick W. Advanced Optical Materials. Wiley-VCH GmbH. Том 8. 2020. 2000504 с.
ENERGY BAND GAPS AND EXCITED STATES IN SI QD/SIO<SUB>X</SUB>/R<SUB>Y </SUB>O<SUB>Z</SUB> (R = SI, AL, ZR) SUBOXIDE SUPERLATTICES Статья Zatsepin A.F., Buntov E.A., Zatsepin D.A., Kurmaev E.Z., Pustovarov V.A., Ershov A.V., Johnson N.W., Moewes A. Journal of Physics Condensed Matter. Том 31. 2019. 415301 с.
FUNDAMENTAL CRYSTAL FIELD EXCITATIONS IN MAGNETIC SEMICONDUCTOR SNO<SUB>2</SUB>: MN, FE, CO, NI Статья Leedahl B., McCloskey D.J., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A. Physical Chemistry Chemical Physics. Том 21. 2019. С. 11992-11998
ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3D-METAL DOPED IN<SUB>2</SUB>O<SUB>3</SUB> Статья Ho J., Becker J., Leedahl B., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A. Journal of Materials Science: Materials in Electronics. Springer New York LLC. Том 30. 2019. С. 14091-14098
BANDGAP AND ELECTRONIC STRUCTURE DETERMINATION OF OXYGEN-CONTAINING AMMONOTHERMAL INN: EXPERIMENT AND THEORY Статья Amin M.R., De Boer T., Moewes A., Becker P., Hertrampf J., Niewa R. Journal of Physical Chemistry C. Том 123. 2019. С. 8943-8950
OXYGEN VACANCY INDUCED STRUCTURAL DISTORTIONS IN BLACK TITANIA: A UNIQUE APPROACH USING SOFT X-RAY EXAFS AT THE O–K EDGE Статья Leedahl B., De Boer T., Moewes A., Yuan X. Chemistry - A European Journal. Wiley-VCH Verlag. Том 25. 2019. С. 3272-3278
LUMINESCENCE OF AN OXONITRIDOBERYLLATE: A STUDY OF NARROW-BAND CYAN-EMITTING SR[BE<SUB>6</SUB>ON<SUB>4</SUB>]:EU<SUP>2+</SUP> Статья Strobel P., Schnick W., De Boer T., Moewes A., Weiler V., Schmidt P.J. Chemistry of Materials. American Chemical Society. Том 30. 2018. С. 3122-3130
DESIGNING LUMINESCENT MATERIALS AND BAND GAPS: A SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY STUDY OF LI<SUB>2</SUB>CA<SUB>2</SUB>[MG<SUB>2</SUB>SI<SUB>2</SUB>N<SUB>6</SUB>]:EU<SUP>2+</SUP> AND BA[LI<SUB>2</SUB>(AL<SUB>2</SUB>SI<SUB>2</SUB>)N<SUB>6</SUB>]:EU<SUP>2+</SUP> Статья Tolhurst T.M., Moewes A., Strobel P., Schnick W., Schmidt P.J. Journal of Physical Chemistry C. Том 121. 2017. С. 14296-14301
STRUCTURE-INDUCED SWITCHING OF THE BAND GAP, CHARGE ORDER, AND CORRELATION STRENGTH IN TERNARY VANADIUM OXIDE BRONZES Статья Tolhurst T.M., Leedahl B., Moewes A., Andrews J.L., Marley P.M., Banerjee S. Chemistry - A European Journal. Wiley-VCH Verlag. Том 23. 2017. С. 9846-9856
X-RAY SPECTROSCOPIC STUDY OF AMORPHOUS AND POLYCRYSTALLINE PBO FILMS, Α-PBO, AND Β-PBO FOR DIRECT CONVERSION IMAGING Статья Qamar A., Leblanc K., Moewes A., Semeniuk O., Reznik A., Lin J., Pan Y. Scientific Reports. Nature Publishing Group. Том 7. 2017. 13159 с.
INTERCALATION-INDUCED EXFOLIATION AND THICKNESS-MODULATED ELECTRONIC STRUCTURE OF A LAYERED TERNARY VANADIUM OXIDE Статья Andrews J.L., De Jesus L.R., Marley P.M., Banerjee S., Tolhurst T.M., Moewes A. Chemistry of Materials. American Chemical Society. Том 29. 2017. С. 3285-3294
THE ELECTRONIC STRUCTURE OF Ε′-V<SUB>2</SUB>O<SUB>5</SUB>: AN EXPANDED BAND GAP IN A DOUBLE-LAYERED POLYMORPH WITH INCREASED INTERLAYER SEPARATION Статья Tolhurst T.M., Leedahl B., Moewes A., Andrews J.L., Banerjee S. Journal of Materials Chemistry A. Royal Society of Chemistry. Том 5. 2017. С. 23694-23703
TUNABILITY OF ROOM-TEMPERATURE FERROMAGNETISM IN SPINTRONIC SEMICONDUCTORS THROUGH NONMAGNETIC ATOMS Статья Leedahl B., Abooalizadeh Z., Leblanc K., Moewes A. Physical Review B. Том 96. 2017. 045202 с.
BULK VS. SURFACE STRUCTURE OF 3D METAL IMPURITIES IN TOPOLOGICAL INSULATOR BI<SUB>2</SUB>TE<SUB>3</SUB> Статья Leedahl B., Moewes A., Boukhvalov D.W., Kurmaev E.Z., Kukharenko A., Zhidkov I.S., Cholakh S.O., Gavrilov N.V., Le P.H., Luo C.W. Scientific Reports. Nature Publishing Group. Том 7. 2017. 5758 с.