BAND GAP AND ELECTRONIC STRUCTURE OF DEFECTS IN THE TERNARY NITRIDE BP<SUB>3</SUB>N<SUB>6</SUB>: EXPERIMENT AND THEORY Статья De Boer T., Fattah M.F.A., Amin M.R., Moewes A., Ambach S.J., Vogel S., Schnick W. Journal of Materials Chemistry C. Royal Society of Chemistry. Том 10. 2022. С. 6429-6434
ENERGY LEVELS OF EU<SUP>2+</SUP> STATES IN THE NEXT-GENERATION LED-PHOSPHOR SRLI<SUB>2</SUB>AL<SUB>2</SUB>O<SUB>2</SUB>N<SUB>2</SUB>:EU<SUP>2+</SUP> Статья Amin M.R., Moewes A., Strobel P., Schmidt P.J., Schnick W. Journal of Materials Chemistry C. Royal Society of Chemistry. 2022.
INVERSE-TUNABLE RED LUMINESCENCE AND ELECTRONIC PROPERTIES OF NITRIDOBERYLLOALUMINATES SR<SUB>2−X</SUB>BA<SUB>X</SUB>[BEAL<SUB>3</SUB>N<SUB>5</SUB>]:EU<SUP>2+</SUP> (X=0–2) Статья Elzer E., Schnick W., Strobel P., Weiler V., Schmidt P.J., Amin M.R., Moewes A. Chemistry - A European Journal. Wiley-VCH Verlag. Том 28. 2022. e202104121 с.
UNRAVELING THE ENERGY LEVELS OF EU<SUP>2+</SUP>IONS INMBE<SUB>20</SUB>N<SUB>14</SUB>:EU<SUP>2+</SUP>(M= SR, BA) PHOSPHORS Статья Amin M.R., Moewes A., Elzer E., Schnick W. Журнал физической химии С. Том 125. 2021. С. 11828-11837
UNDERSTANDING OF LUMINESCENCE PROPERTIES USING DIRECT MEASUREMENTS ON EU<SUP>2+</SUP>-DOPED WIDE BANDGAP PHOSPHORS Статья Amin M.R., Qamar A., Moewes A., Strobel P., Giftthaler T., Schnick W. Advanced Optical Materials. Wiley-VCH GmbH. Том 8. 2020. 2000504 с.
ELECTRONIC STRUCTURE INVESTIGATION OF WIDE BAND GAP SEMICONDUCTORS - MG<SUB>2</SUB>PN<SUB>3</SUB>AND ZN<SUB>2</SUB>PN<SUB>3</SUB>: EXPERIMENT AND THEORY Статья Al Fattah M.F., Kasap S., Amin M.R., Moewes A., Mallmann M., Schnick W. Journal of Physics Condensed Matter. Том 32. 2020. 405504 с.
BANDGAP AND ELECTRONIC STRUCTURE DETERMINATION OF OXYGEN-CONTAINING AMMONOTHERMAL INN: EXPERIMENT AND THEORY Статья Amin M.R., De Boer T., Moewes A., Becker P., Hertrampf J., Niewa R. Журнал физической химии С. Том 123. 2019. С. 8943-8950