High-spin silicon fullerene Si60 and its oligomers

High-spin states of the Si60 fullerene and its oligomers are considered semiempirically by using sequential and parallel implementations of the AMI codes. The states are energetically favorable and nearly degenerated over triplet, quintet, and septet spins. All atoms of the Si60 fullerene are in sp3-configuration, which is supported by atomic spin density in addition to electron density, the latter to be responsible for the formation of chemical bonds. Spotted distribution of spin density over atoms provides molecular magnetism of the molecule. A similar picture is disclosed for oligomers {Si60}n with n up to 8, which according to computational results should be magnetic with a fractal-like distribution of spin density over atoms. Opposite the latter, composites Si60C60 and Si60H60 behave conventionally and are nonmagnetic. A way of the Si60 fullerene synthesizing is suggested via the above composite product as intermediates. The considered oligomers are proposed as a model of silicon nanofibers observed recently. © 2002 Wiley Periodicals, Inc. Int. J. Quantum Chem.

Авторы
Sheka E.F. 1 , Nikitina E.A. 2 , Zayets V.A. 3 , Ginzburg I.Ya.3
Издательство
John Wiley and Sons Inc.
Номер выпуска
4
Язык
Английский
Страницы
441-448
Статус
Опубликовано
Том
88
Год
2002
Организации
  • 1 Russian Peoples' Friendship University, General Physics Department, ul.Ordjonikidze 3, Moscow 117302, Russian Federation
  • 2 Institute of Applied Mechanics, Russian Academy of Sciences, Leninsky prospekt 31A, Moscow 117334, Russian Federation
  • 3 Institute of Chemical Physics Problems, Russian Academy of Sciences, 142432 Chernogolovka, Moscow, Russian Federation
Ключевые слова
AM1 quantum chemical approach; Composite silicon/carbon fullerene; High spin states; Molecular magnetism; Silicon fullerene oligomers; Silicon fullerene Si60
Дата создания
19.10.2018
Дата изменения
19.10.2018
Постоянная ссылка
https://repository.rudn.ru/ru/records/article/record/191/
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Kolganova T.V., Dzharadat T., Ermolaev A.V., Osipova I.G., Vasil'eva E.A., Dalin M.V., Doyle R.J.
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