Hydrogen passivation effects in quaternary solid solutions of InGaAsSb lattice matched to GaSb

Hydrogen passivation effects in InAs-related and GaSb-related InGaAsSb layers lattice matched to GaSb have been studied. Strong passivation of shallow acceptors has been observed and is explained by the assumption that hydrogen is a deep donor in these materials. The effects of the hydrogen treatment mode on the passivation efficiency are also discussed, as well as the changes induced by hydrogen treatment in photoluminescence spectra of the layers. © 1994.

Authors
Polyakov A.Y.1 , Tunitskaya I.V.1 , Druzhinina L.V.1 , Govorkov A.V.1 , Smirnov N.B.1 , Kozhukhova E.A.1 , Borodina O.M.1 , Milnes A.G.2 , Li X.2 , Pearton S.J.3 , Balmashnov A.A.4
Journal
Materials Science and Engineering B
Number of issue
2-3
Language
English
Pages
137-141
Status
Published
Link
External link
DOI
10.1016/0921-5107(94)90134-1
Volume
27
Year
1994
Organizations
  • 1 Institute of Rare Metals, B. Tolmachevsky, Moscow, 109017, Russian Federation
  • 2 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
  • 3 Materials Science Department, University of Florida, Gainesville, FL 32611, United States
  • 4 Russian Friendship University, 6 Miklukho-Maklay St, Moscow, 117198, Russian Federation
Keywords
Epitaxy of thin films; Gallium antimonide; Hydrogen; Indium arsenide
Date of creation
19.10.2018
Date of change
19.10.2018
Short link
https://repository.rudn.ru/en/records/article/record/968/
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