Hydrogen passivation effects in InGaAlP and InGaP

The effects of hydrogen treatment on electrical properties, luminescence spectra, and deep traps in InGaAlP and InGaP have been studied. It is shown that acceptors and donors (both shallow and deep) can be effectively passivated by hydrogen. The hydrogen is found not only to passivate the main electron and hole traps in our samples, but also to generate electron traps in n-InGaAlP and hole traps in p-InGaP. The influence of hydrogen treatment mode (direct plasma or a crossed-beams source in which the low-energy ion bombardment of the surface is effectively eliminated) on hydrogen concentration and hydrogen profiles in InGaAlP are discussed. © 1994 American Institute of Physics.

Authors
Gorbylev V.A.1 , Chelniy A.A.1 , Polyakov A.Y.2 , Pearton S.J.3 , Smirnov N.B.2 , Wilson R.G.4 , Milnes A.G.5 , Cnekalin A.A.1 , Govorkov A.V.2 , Leiferov B.M.2 , Borodina O.M.2 , Balmashnov A.A.6
Journal
Journal of Applied Physics
Number of issue
11
Language
English
Pages
7390-7398
Status
Published
Link
External link
DOI
10.1063/1.357964
Volume
76
Year
1994
Organizations
  • 1 Sigma Plus Company, Vinogradov str. 8/75, Moscow 117133, Russian Federation
  • 2 Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 109017, Russian Federation
  • 3 Materials Science Department, University of Florida, Gainesville, FL 32611, United States
  • 4 Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265, United States
  • 5 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
  • 6 Russian Friendship University, Miklukho-Maklay str. 6, Moscow 117198, Russian Federation
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