In-ga-zn-sn-o amorphous films for transparent electronics

Results of an investigation of two systems are presented: the ceramic oxide system In2O3-Ga2O3-ZnO-SnO2 (IGZSO) and the metal-ceramic system (IGZSO)0.98 – (In-Ga-Zn-Sn)0.02. The XRD and SEM methods were used for both systems to study the structure of mechanically activated press powders, targets for sputtering made by the spark plasma sintering of the press powders, and thin films deposited using these targets by dc magnetron sputtering at substrate temperatures of 50 – 300°C. The phase compositions of the sputtered targets, as well as the effect of the presence of a superstoichiometric metal component in the target on structural and functional performances of deposited transparent films were investigated. A high degree of amorphization of the as-deposited films was found for both types of targets. It has been demonstrated that the amorphous state of the films is stable during heat post-treatments in air (up to 700°C). At the same time, the thin films were characterized by high thickness uniformity and surface smoothness, i.e., they were free of columnar structure and internal nanopores. Prospects of using IGZSO-based films in transparent electronics for display applications are reviewed. © 2021 SID.