Plasma metallization coating and its adhesion to microwave transistor substrate - Part 1: Methods of experimental research

A previously proposed mechanism of adhesion of a plasma metal coating to a ceramic substrate is investigated experimentally. This adhesion mechanism is based on the increase in the concentration of structural defects (vacancies) and electron exchange interaction of a metal-oxide beryllium pair during the plasma thermal activation of the process. Given the brazing of ceramic products with hard solders in hydrogen, the coating composition for metallization is determined. The optimal temperature of reactive plasma metals coating for strong adhesion to the ceramic substrate is found. Methods to improve the technology of plasma vacuum metallization using ion-plasma magnetron sputtering and ion implantation are proposed. © 1973-2012 IEEE.

Authors
Vysikaylo P.I.1 , Mitin V.S.2 , Mitin A.V.2 , Krasnobaev N.N.2 , Belyaev V.V. 3, 4
Journal
IEEE Transactions on Plasma Science
Number of issue
4
Language
English
Pages
1088-1092
Status
Published
Link
External link
DOI
10.1109/TPS.2015.2404833
Number
7052363
Volume
43
Year
2015
Organizations
  • 1 Plasma Chemistry Laboratory, Moscow Radiotechnical Institute, Russian Academy of Sciences, Moscow, 119991, Russian Federation
  • 2 Plasma Chemistry Laboratory, A.A. Bochvar High-Technology Scientific Research Institute for Inorganic Materials, Moscow, 123098, Russian Federation
  • 3 Nanotech Laboratory, Moscow Region State University, Moscow, 119991, Russian Federation
  • 4 Peoples' Friendship University of Russia, Moscow, 117198, Russian Federation
Keywords
Diffusion of vacancies; high-power microwave devices; mechanism and kinetics of formation of adhesion; plasma metal coating; power layer.
Cite
ГОСТ MLA RIS BibTex
Share

Other records