Annealing effect on the electronic structure and magnetic properties of Mn-doped ZnO films

Authors
Jin J.1, 2 , Zhang X.Y.2 , Zhou Y.X.2 , Chang G.S. 3
Journal
Semiconductor Science and Technology
Number of issue
3
Language
English
Pages
035012
Status
Published
Volume
27
Year
2012
Organizations
  • 1 School of Material Science and Engineering|Shanghai University
  • 2 Department of Physics|Synchrotron Radiation Research Center|Fudan University
  • 3 Department of Physics and Engineering Physics|University of Saskatchewan
Date of creation
08.07.2024
Date of change
08.07.2024
Short link
https://repository.rudn.ru/en/records/article/record/131311/
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