The origin of the resistance change in GeSbTe films

Authors
Jang M.H.1 , Cho M.H.1, 2 , Park S.J.2 , Kurmaev E.Z.3 , Finkelstein L.D.3 , Chang G.S. 4
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Number of issue
15
Language
English
Pages
152113-3
Status
Published
Volume
97
Year
2010
Organizations
  • 1 Atomic-scale Surface Science Research Institute|Yonsei University
  • 2 Institute of Physics and Applied Physics|Yonsei University
  • 3 Ural Division|Institute of Metal Physics|Russian Academy of Sciences
  • 4 Department of Physics and Engineering Physics|University of Saskatchewan
Date of creation
08.07.2024
Date of change
08.07.2024
Short link
https://repository.rudn.ru/en/records/article/record/123349/
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