Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

Authors
Seo J.H.1 , Park D.S.1 , Cho S.W.1 , Kim C.Y.1 , Jang W.C.1 , Whang C.N.1 , Yoo K.-H.1 , Chang G.S. 2 , Pedersen T. 2 , Moewes A. 2 , Chae K.H.3 , Cho S.J.4
Publisher
American Institute of Physics
Number of issue
16
Language
English
Status
Published
Volume
89
Year
2006
Organizations
  • 1 Institute of Physics and Applied Physics|Yonsei University
  • 2 Department of Physics and Engineering Physics|University of Saskatchewan
  • 3 Division of Materials Science and Technology|Korea Institute of Science and Technology
  • 4 Department of Physics|Kyungsung University
Date of creation
08.07.2024
Date of change
08.07.2024
Short link
https://repository.rudn.ru/en/records/article/record/118816/
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