Amin M.R.

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BAND GAP AND ELECTRONIC STRUCTURE OF DEFECTS IN THE TERNARY NITRIDE BP3N6: EXPERIMENT AND THEORY

Article

De Boer T., Fattah M.F.A., Amin M.R., Moewes A., Ambach S.J., Vogel S., Schnick W.

Journal of Materials Chemistry C. Royal Society of Chemistry. Vol. 10. 2022. P. 6429-6434

INVERSE-TUNABLE RED LUMINESCENCE AND ELECTRONIC PROPERTIES OF NITRIDOBERYLLOALUMINATES SR2−XBAX[BEAL3N5]:EU2+ (X=0–2)

Article

Elzer E., Schnick W., Strobel P., Weiler V., Schmidt P.J., Amin M.R., Moewes A.

Chemistry - A European Journal. Wiley-VCH Verlag. Vol. 28. 2022. e202104121 p.

ENERGY LEVELS OF EU2+ STATES IN THE NEXT-GENERATION LED-PHOSPHOR SRLI2AL2O2N2:EU2+

Article

Amin M.R., Moewes A., Strobel P., Schmidt P.J., Schnick W.

Journal of Materials Chemistry C. Royal Society of Chemistry. 2022.

UNRAVELING THE ENERGY LEVELS OF EU2+IONS INMBE20N14:EU2+(M= SR, BA) PHOSPHORS

Article

Amin M.R., Moewes A., Elzer E., Schnick W.

Journal of Physical Chemistry C. Vol. 125. 2021. P. 11828-11837

UNDERSTANDING OF LUMINESCENCE PROPERTIES USING DIRECT MEASUREMENTS ON EU2+-DOPED WIDE BANDGAP PHOSPHORS

Article

Amin M.R., Qamar A., Moewes A., Strobel P., Giftthaler T., Schnick W.

Advanced Optical Materials. Wiley-VCH GmbH. Vol. 8. 2020. 2000504 p.

ELECTRONIC STRUCTURE INVESTIGATION OF WIDE BAND GAP SEMICONDUCTORS - MG2PN3AND ZN2PN3: EXPERIMENT AND THEORY

Article

Al Fattah M.F., Kasap S., Amin M.R., Moewes A., Mallmann M., Schnick W.

Journal of Physics Condensed Matter. Vol. 32. 2020. 405504 p.

BANDGAP AND ELECTRONIC STRUCTURE DETERMINATION OF OXYGEN-CONTAINING AMMONOTHERMAL INN: EXPERIMENT AND THEORY

Article

Amin M.R., De Boer T., Moewes A., Becker P., Hertrampf J., Niewa R.

Journal of Physical Chemistry C. Vol. 123. 2019. P. 8943-8950

Page 1 of 1. Items from 1 to 7 of 7

Other authors

Prosser-Snelling E.

Records: 1

Moewes A.

Records: 149

List of records

BAND GAP AND ELECTRONIC STRUCTURE OF DEFECTS IN THE TERNARY NITRIDE BP<SUB>3</SUB>N<SUB>6</SUB>: EXPERIMENT AND THEORY

INVERSE-TUNABLE RED LUMINESCENCE AND ELECTRONIC PROPERTIES OF NITRIDOBERYLLOALUMINATES SR<SUB>2−X</SUB>BA<SUB>X</SUB>[BEAL<SUB>3</SUB>N<SUB>5</SUB>]:EU<SUP>2+</SUP> (X=0–2)

ENERGY LEVELS OF EU<SUP>2+</SUP> STATES IN THE NEXT-GENERATION LED-PHOSPHOR SRLI<SUB>2</SUB>AL<SUB>2</SUB>O<SUB>2</SUB>N<SUB>2</SUB>:EU<SUP>2+</SUP>

UNRAVELING THE ENERGY LEVELS OF EU<SUP>2+</SUP>IONS INMBE<SUB>20</SUB>N<SUB>14</SUB>:EU<SUP>2+</SUP>(M= SR, BA) PHOSPHORS

UNDERSTANDING OF LUMINESCENCE PROPERTIES USING DIRECT MEASUREMENTS ON EU<SUP>2+</SUP>-DOPED WIDE BANDGAP PHOSPHORS

ELECTRONIC STRUCTURE INVESTIGATION OF WIDE BAND GAP SEMICONDUCTORS - MG<SUB>2</SUB>PN<SUB>3</SUB>AND ZN<SUB>2</SUB>PN<SUB>3</SUB>: EXPERIMENT AND THEORY

BANDGAP AND ELECTRONIC STRUCTURE DETERMINATION OF OXYGEN-CONTAINING AMMONOTHERMAL INN: EXPERIMENT AND THEORY

Other authors

Prosser-Snelling E.

Moewes A.