Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO<sub>2</sub>

Green, R.J.; St. Onge, D.J.; Moewes, A.; Zatsepin, D.A.; Kurmaev, E.Z.; Gavrilov, N.V.; Zatsepin, A.F.

Авторы

Green R.J. ¹ , St. Onge D.J. ¹ , Moewes A. ¹ , Zatsepin D.A. ^2, ³ , Kurmaev E.Z. ³ , Gavrilov N.V. ⁴ , Zatsepin A.F. ⁵

Журнал

Journal of Applied Physics

Номер выпуска

Язык

Английский

Страницы

103708

Статус

Опубликовано

Том

115

Год

2014

Организации

¹ Department of Physics and Engineering Physics, University of Saskatchewan
² Department of Electrophysics, Institute of Physics and Technology, Ural Federal University
³ Institute of Metal Physics, Russian Academy of Sciences, Ural Division
⁴ Institute of Electrophysics, Russian Academy of Sciences, Ural Division
⁵ Institute of Physics and Technology, Ural Federal University

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Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO2

Другие записи

MODULATION OF THE BAND GAP OF GRAPHENE OXIDE: THE ROLE OF AA-STACKING

LOCAL STRUCTURE OF FE IMPURITY ATOMS IN ZNO: BULK VERSUS SURFACE

Цитировать

Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO₂