Bulletin of Experimental Biology and Medicine. Vol. 118. 1994. P.. 1193-1195
The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy
It is shown that addition of Gd to the melt during liquid phase epitaxy growth of InGaAsSb layers greatly reduces contamination of the samples with residual donor impurities, such as sulfur and silicon. The effect is related to Gd gettering of these impurities in the melt. © 1994.
Authors
Dolginov L.M. 1 , Tunitskaya I.V. 1 , Polyakov A.Y. 1 , Druzhinina L.V. 1 , Vinogradova G.V. 1 , Smirnov N.B. 1 , Govorkov A.V. 1 , Borodina O.M. 1 , Kozhukhova E.A. 1 , Balmashnov A.A. 2 , Milnes A.G. 3
Journal
Issue number
2
Language
English
Pages
147-150
State
Published
Link
Volume
251
Year
1994
Organizations
- 1 Institute of Rare Metals, B. Tolmachevsky 5, Moscow, 109017, Russian Federation
- 2 Russia Friendship University, Mikluho- Maklay str. 6, Moscow, 117198, Russian Federation
- 3 ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213-3890, United States
Keywords
Gallium antimode; Indium arsenide; Semiconductors; Sulphur
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Other records
Physics Letters, Section A: General, Atomic and Solid State Physics. Vol. 194. 1994. P.. 223-227