PRESSURE-INDUCED CHANGES IN THE ELECTRON DENSITY DISTRIBUTION IN Α -GE NEAR THE Α-Β TRANSITION Статья Li R., Liu J., Bai L., Shen G., Tse J.S. Applied Physics Letters. American Institute of Physics. Том 107. 2015. 072109 с.
HIGH PRESSURE-LOW TEMPERATURE PHASE DIAGRAM OF BARIUM: SIMPLICITY VERSUS COMPLEXITY Статья Desgreniers S., Tse J.S., Li Q., Ma Y., Matsuoka T., Ohishi Y. Applied Physics Letters. American Institute of Physics. Том 107. 2015. 221908 с.
PRESSURE INDUCED SPIN TRANSITION REVEALED BY IRON M2,3-EDGE SPECTROSCOPY Статья Nyrow A., Büning T., Mende K., Tolan M., Sternemann C., Tse J.S., Hiraoka N., Desgreniers S., Wilke M. Applied Physics Letters. American Institute of Physics. Том 104. 2014. 262408 с.
THE ORIGIN OF THE RESISTANCE CHANGE IN GESBTE FILMS Статья Jang M.H., Cho M.H., Park S.J., Kurmaev E.Z., Finkelstein L.D., Chang G.S. Applied Physics Letters. American Institute of Physics. Том 97. 2010. С. 152113-3
ELECTRONIC STRUCTURE OF A POTENTIAL OPTICAL CRYSTAL Y BA3 B9 O18: EXPERIMENT AND THEORY Статья Zhang Z.H., He M., Wang X.F., Li Q., Yang J. Applied Physics Letters. American Institute of Physics. Том 92. 2008. 171903 с.
BUFFER LAYER EFFECT ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF RUBRENE-BASED ORGANIC THIN-FILM TRANSISTORS Статья Seo J.H., Park D.S., Cho S.W., Kim C.Y., Jang W.C., Whang C.N., Yoo K.-H., Chang G.S., Pedersen T., Moewes A., Chae K.H., Cho S.J. Applied Physics Letters. American Institute of Physics. Том 89. 2006.
COMPTON SCATTERING OF ELEMENTAL SILICON AT HIGH PRESSURE Статья Tse J.S., Klug D.D., Jiang D.T., Sternemann C., Volmer M., Huotari S., Hiraoka N., Honkimäki V., Hämäläinen K. Applied Physics Letters. American Institute of Physics. Том 87. 2005. С. 1-3
ANALYSIS OF OCTADECYLTRICHLOROSILANE TREATMENT OF ORGANIC THIN-FILM TRANSISTORS USING SOFT X-RAY FLUORESCENCE SPECTROSCOPY Статья Kang S.J., Yi Y., Kim C.Y., Whang C.N., Callcott T.A., Krochak K., Moewes A., Chang G.S. Applied Physics Letters. American Institute of Physics. Том 86. 2005. С. 1-3
ANGULAR ROTATION OF MAGNETIC HYSTERESIS OF ION-IRRADIATED FERROMAGNETIC THIN FILMS Статья Chang G.S., Callcott T.A., Zhang G.P., Woods G.T., Kim S.H., Shin S.W., Jeong K., Whang C.N., Moewes A. Applied Physics Letters. American Institute of Physics. Том 81. 2002. С. 3016-3018