HIGH PRESSURE-LOW TEMPERATURE PHASE DIAGRAM OF BARIUM: SIMPLICITY VERSUS COMPLEXITY СтатьяDesgreniers S., Tse J.S., Li Q., Ma Y., Matsuoka T., Ohishi Y.Applied Physics Letters. Том 107. 2015. 221908 с.
PRESSURE-INDUCED CHANGES IN THE ELECTRON DENSITY DISTRIBUTION IN Α -GE NEAR THE Α-Β TRANSITION СтатьяLi R., Liu J., Bai L., Shen G., Tse J.S.Applied Physics Letters. Том 107. 2015. 072109 с.
PRESSURE INDUCED SPIN TRANSITION REVEALED BY IRON M2,3-EDGE SPECTROSCOPY СтатьяNyrow A., Büning T., Mende K., Tolan M., Sternemann C., Tse J.S., Hiraoka N., Desgreniers S., Wilke M.Applied Physics Letters. Том 104. 2014. 262408 с.
THE ORIGIN OF THE RESISTANCE CHANGE IN GESBTE FILMS СтатьяJang M.H., Cho M.H., Park S.J., Kurmaev E.Z., Finkelstein L.D., Chang G.S.Applied Physics Letters. Том 97. 2010. С. 152113-3
ELECTRONIC STRUCTURE OF A POTENTIAL OPTICAL CRYSTAL Y BA3 B9 O18: EXPERIMENT AND THEORY СтатьяZhang Z.H., He M., Wang X.F., Li Q., Yang J.Applied Physics Letters. Том 92. 2008. 171903 с.
BUFFER LAYER EFFECT ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF RUBRENE-BASED ORGANIC THIN-FILM TRANSISTORS СтатьяSeo J.H., Park D.S., Cho S.W., Kim C.Y., Jang W.C., Whang C.N., Yoo K.-H., Chang G.S., Pedersen T., Moewes A., Chae K.H., Cho S.J.Applied Physics Letters. Том 89. 2006.
COMPTON SCATTERING OF ELEMENTAL SILICON AT HIGH PRESSURE СтатьяTse J.S., Klug D.D., Jiang D.T., Sternemann C., Volmer M., Huotari S., Hiraoka N., Honkimäki V., Hämäläinen K.Applied Physics Letters. Том 87. 2005. С. 1-3
ANALYSIS OF OCTADECYLTRICHLOROSILANE TREATMENT OF ORGANIC THIN-FILM TRANSISTORS USING SOFT X-RAY FLUORESCENCE SPECTROSCOPY СтатьяKang S.J., Yi Y., Kim C.Y., Whang C.N., Callcott T.A., Krochak K., Moewes A., Chang G.S.Applied Physics Letters. Том 86. 2005. С. 1-3
ANGULAR ROTATION OF MAGNETIC HYSTERESIS OF ION-IRRADIATED FERROMAGNETIC THIN FILMS СтатьяChang G.S., Callcott T.A., Zhang G.P., Woods G.T., Kim S.H., Shin S.W., Jeong K., Whang C.N., Moewes A.Applied Physics Letters. Том 81. 2002. С. 3016-3018